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NST489AMT1 High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications
Features
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* Pb-Free Package is Available
MAXIMUM RATINGS (TA = 25C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Symbol VCEO VCBO VEBO IC ICM Max 30 50 5.0 2.0 3.0 Unit V V V A A
30 VOLTS, 3.0 AMPS NPN TRANSISTOR
COLLECTOR 1, 2, 5, 6 3 BASE 4 EMITTER 4 3
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead #1 Total Device Dissipation (Single Pulse < 10 s) Junction and Storage Temperature Range Symbol PD (Note 1) 535 4.3 RqJA (Note 1) PD (Note 2) 1.180 9.4 RqJA (Note 2) RqJL (Note 1) RqJL (Note 2) PDsingle (Notes 2 and 3) TJ, Tstg 106 110 50 1.75 -55 to +150 W mW/C C/W C/W C/W W C 234 mW mW/C C/W Max Unit
6
5
1
2
TSOP-6 CASE 318G STYLE 6
DEVICE MARKING
N2 M G G
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 with 1 oz and 3.9 mm2 of copper area. 2. FR-4 with 1 oz and 645 mm2 of copper area. 3. Refer to Figure 8.
N2 = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
Device NST489AMT1 NST489AMT1G Package TSSOP-6 TSSOP-6 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2006
1
April, 2006 - Rev. 7
Publication Order Number: NST489AMT1/D
NST489AMT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector-Base Breakdown Voltage (IC = 0.1 mA, IE = 0) Emitter -Base Breakdown Voltage (IE = 0.1 mA, IC = 0) Collector Cutoff Current (VCB = 30 V, IE = 0) Collector-Emitter Cutoff Current (VCES = 30 V) Emitter Cutoff Current (VEB = 4.0 V) ON CHARACTERISTICS DC Current Gain (Note 4) (IC = 1.0 mA, VCE = 5.0 V) (IC = 0.5 A, VCE = 5.0 V) (IC = 1.0 A, VCE = 5.0 V) (IC = 1.0 A, IB = 100 mA) (IC = 0.5 A, IB = 50 mA) (IC = 0.1 A, IB = 1.0 mA) hFE 300 300 200 - - - - - 200 - - 500 - 0.10 0.06 0.05 - - 300 - - 900 - 0.200 0.125 0.075 1.1 1.1 - 15 V V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICES IEBO 30 50 5.0 - - - - - - - - - - - - 0.1 0.1 0.1 V V V mA mA mA Symbol Min Typ Max Unit
Collector -Emitter Saturation Voltage (Note 4)
VCE(sat)
Base -Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 0.1 A) Base -Emitter Turn-on Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz Output Capacitance (f = 1.0 MHz) 4. Pulsed Condition: Pulse Width 300 msec, Duty Cycle 2%. 1.0 0.9 0.8 0.7 VCE(sat) (V) 0.6 0.5 0.4 0.3 0.2 0.1 0 IC = 500 mA IC = 100 mA 0.001 0.01 Ib (A) 0.1 0.2 IC = 1 A IC = 2 A 1.0 0.9 0.8 0.7 VCE(sat) (V) 0.6 0.5 0.4 0.3 0.2 0.1 0 0.001
VBE(sat) VBE(on) fT Cobo
V V MHz pF
Ic/Ib = 100 Ic/Ib = 10
0.01 Ic (A)
0.1
1
2
Figure 1. VCE (sat) versus Ib
800 700 600 500 hFE 400 300 200 100 0 0.001 0.01 Ic (A) 0.1 1 2 0.2 0 -55C +125C +25C VBE(on) (V) 1.2
Figure 2. VCE (sat) versus Ic
VCE = 5 V
VCE = 5 V 1.0 0.8 0.6 0.4 +125C -55C +25C
0.001
0.01 Ic (A)
0.1
1
2
Figure 3. hFE versus Ic http://onsemi.com
2
Figure 4. VBE(on) versus Ic
NST489AMT1
1.2 1.0 Ic/Ib = 10 VBE (sat) (V) 0.8 Ic/Ib = 100 0.6 0.4 0.2 0 10.00 IC COLLECTOR CURRENT (A) 3.0 1.00
0.10
1 ms 10 ms 100 ms 1s
0.001
0.01 Ic (A)
0.1
1
2
SINGLE PULSE Tamb = 25C 0.01 0.10 1.00 10.00 VCE(sat) (V)
dc 100.00
Figure 5. VBE(sat) versus Ic
Figure 6. Safe Operating Area
fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
1000
100
10 1
10 IC, COLLECTOR CURRENT (mA)
100
1000
Figure 7. fT (MHZ) versus IC (mA) VCE = 5.0 V
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5 0.2
0.1
0.1 0.05 0.02 0.01
0.01 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 10 100 1000
0.001
Figure 8. Normalized Thermal Response
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NST489AMT1
PACKAGE DIMENSIONS
TSOP-6 CASE 318G-02 ISSUE S
D
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0 MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10 - MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0 INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 - MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10
6
5 1 2
4 3
HE
E
b e q 0.05 (0.002) A1 A L c
STYLE 6: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR
SOLDERING FOOTPRINT*
2.4 0.094
1.9 0.075
0.95 0.037 0.95 0.037
0.7 0.028 1.0 0.039
SCALE 10:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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NST489AMT1/D

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